- 44 - .412(10.5) max .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) dia pin1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) pin 1 pin 2 case positive case rev.1 oct.-2003 MBR1035 thru mbr10h100 10.0 amps. schottky barrier rectifiers voltage range 35 to 100 volts current 10.0 amperes f eatures plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case m echanical data cases: jedec to-220a molded plastic body terminals: lead solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams to-220a dimensions in inches and (millimeters) m aximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr 1035 mbr 1045 mbr 1050 mbr 1060 mbr 10h90 mbr 10h100 unit s maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 v maximum rms voltage v rms 24 31 35 42 63 70 v maximum dc blocking voltage v dc 35 45 50 60 90 100 v maximum average forward rectified current see fig. 1 i (av) 10 a peak repetitive forward current (square wave, 20khz) at tc=135 o c i frm 20.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a voltage rate of change (rated v r ) dv/dt 10,000 v/us maximum instantaneous forward voltage at (note 2) i f =10a, tc=25 o c i f =10a, tc=125 o c i f =20a, tc=25 o c i f =20a, tc=125 o c v f 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.71 - - v maximum instantaneous reverse current @ tc =25 at rated dc blocking voltage (note 2) @ tc=125 i r 0.1 15.0 0.0035 4.5 ma ma m aximum t hermal r esistance , j unction to case r jc 2.0 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle
-45- fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 0.1 10 100 25 50 75 125 100 150 175 number of cycles at 60hz fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 MBR1035-mbr1045 mbr1050-mbr1060 mbr10h90-mbr10h100 fig.4- typical reverse characteristics instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 MBR1035-mbr1045 mbr1050-mbr10h100 tj=125 c 0 tj=25 c 0 tj=75 c 0 t, pulse duration.( sec.) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1.0 10 100 100 1,000 4,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 MBR1035-mbr1045 mbr1050 & mbr1060 mbr10h90-mbr10h100 0 50 0 2 4 6 8 case temperature. ( c) o transient thermal impedance.( c/w) o fig.6- typical transient thermal characteristic 1 0.01 0.1 10 100 0.1 10.0 1 100 ratings and characteristic curves (MBR1035 thru mbr10h100) 100 150 10 12 average for ward current . (a) fig.1- forward current derating curve resistive or inductive load MBR1035-mbr1045 mbr1050-mbr10h100
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